Data di Pubblicazione:
2011
Abstract:
Extended pi-conjugation in molecular systems is being extensively
exploited in a rapidly expanding range of electronic and photonic
applications. The modification of such extended systems through the use
of heteroatoms allows their tailoring to specific requirements. In
particular, the use of the vacant boron p(pi) orbital can increase the
electron affinity of the extended pi system in an analogous fashion to
the p-doping of crystalline silicon used in more classical
microelectronic devices. Experimental data on such modifications of the
empty level structures of boron-containing pi-electron materials leading
to an increase in their electron affinity are not available in the
literature. Using Electron Transmission Spectroscopy, the energies of
the vertical anion formation of 5-methyl-2-furanboronic acid pinacol
ester (1) and 4-methyl-3-thiopheneboronic acid pinacol ester (2) are
measured and compared with those of the reference unsubstituted
heteroaromatics furan and thiophene. The results are interpreted with
the support of density functional theory (DFT) calculations with the
B3LYP functional. DFT calculations are also used to predict the effects
of boryl substituents on the electronic and geometrical structures of
trans and cis thienyl thiazole.
Tipologia CRIS:
01.01 Articolo in rivista
Elenco autori:
Jones, Derek
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