Quantum dot spectroscopy of proximity-induced superconductivity in a two-dimensional electron gas
Academic Article
Publication Date:
2011
abstract:
We report the realization of a hybrid superconductor-quantum dot device by means of top-down nanofabrication starting from a two-dimensional electron gas in a InGaAs/InAlAs semiconductor heterostructure. The quantum dot is defined by electrostatic gates placed within the normal region of a planar Nb-InGaAs quantum well-Nb junction. Measurements in the regime of strong Coulomb blockade as well as cotunneling spectroscopy allow to directly probe the proximity-induced energy gap in a ballistic two-dimensional electron gas coupled to superconductors
Iris type:
01.01 Articolo in rivista
Keywords:
ANDREEV REFLECTION; DEVICES; JUNCTIONS
List of contributors:
Deon, Fabio; Sorba, Lucia; Biasiol, Giorgio; Pellegrini, Vittorio; Giazotto, Francesco
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