Electrical activation of B in the presence of boron-interstitials clusters

Boron marker-layer structures have been used to analyze the evolution of boron-interstitial clusters (BICs) formed during transient enhanced diffusion. Our approach is based on the measure of B activation by spreading resistance profiling after annealing of Si implantation damage. We investigated a wide range of implant conditions in terms of defect densities below and above the amorphization threshold of Si. We found a common behavior of BICs in terms of trapping and release processes of B atoms. The BICs density as a function of time for different concentration ratios of I and B has been determined.