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Strained and strain-balanced quantum well devices for high-efficiency tandem solar cells

Academic Article
Publication Date:
2001
abstract:
The state of GaAs/InGaAs quantum well solar cell research is reviewed. The effect of strain upon the GaAs/InGaAs cells is discussed and the limits to a strained GaAs/InGaAs cell established. The strain-balance approach is suggested as a means of overcoming the limits inherent to the strained approach and the principle is demonstrated in two differing device configurations. The strain-balance devices show enhanced efficiencies over their strained counterparts and in one case, comparable efficiency to a good GaAs control cell. The application of these cells to tandem structures is discussed, indicating the potential for a substantial efficiency enhancement.
Iris type:
01.01 Articolo in rivista
List of contributors:
Mazzer, Massimo
Authors of the University:
MAZZER MASSIMO
Handle:
https://iris.cnr.it/handle/20.500.14243/45559
Published in:
SOLAR ENERGY MATERIALS AND SOLAR CELLS
Journal
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