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Volume dependence of the Curie temperatures in diluted magnetic semiconductors

Academic Article
Publication Date:
2008
abstract:
Using electronic structure methods and statistical methods, we have studied theoretically the volume dependence of the exchange interactions and Curie temperatures in the diluted magnetic semiconductors. In both Mn-doped GaAs and Mn-doped InAs, the calculated Curie temperatures from numerical exact Monte Carlo simulations are more or less constant for a large volume interval. We have compared the exchange mechanisms in Mn-doped GaAs using both the local density approximation (LDA) and the LDA+U method. It is demonstrated that the magnetic properties are understood within Zener's p-d exchange model for the LDA+U, while in LDA they reflect a mixture between double and p-d exchange mechanisms.
Iris type:
01.01 Articolo in rivista
Keywords:
GA1-XMNXAS
List of contributors:
Picozzi, Silvia
Handle:
https://iris.cnr.it/handle/20.500.14243/457757
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