Data di Pubblicazione:
2012
Abstract:
he work reports on the characterization of high purity epitaxial 4H-SiC grown by liquid phase epitaxy and the performances of Au-Ni/4H-SiC detectors fabricated on the same material. X-ray diffraction and topography as well as I-V, C-V and DLTS measurements are used for the evaluation of the material properties and device characteristics. The X-ray detection abilities are evaluated by pulse-height spectra measurements of the 241Am. Preliminary results of the detector hardness to fast neutron and gamma ray radiations are also reported.
Tipologia CRIS:
04.01 Contributo in Atti di convegno
Keywords:
4H-SiC; Au-Ni/4H-SiC detectors . X-ray diffraction and topography; I-V; C-V and DLTS measurements
Elenco autori:
Gombia, Enos; Ferrari, Claudio
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