Structural and analytical characterization by scanning transmission electron microscopy of silicon-based nanostructures
Academic Article
Publication Date:
2007
abstract:
A few recent applications of scanning transmission electron microscopy (STEM) methods to problems of interest for nanoelectronics are reported. They include nanometer-scaled dopant profiles by Z-contrast and strain mapping by convergent beam diffraction.
Iris type:
01.01 Articolo in rivista
Keywords:
Analytical characterizations; Electron diffraction; Dopant profiles; Scanning Transmission Electron microscopy; Strain mapping
List of contributors:
Balboni, Roberto; Armigliato, Aldo; Parisini, Andrea
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