The monitoring of 2d-3d transition for InAs/GaAs (001) self-assembled quantum dots by atomic force microscopy

We present a detailed Atomic Force Microscopy study of InAs/GaAs (001) self-assembled quantum dots, grown by Molecular Beam Epitaxy, during its complete evolution cycle, transition from 2D islands to 3D islands. We created the dots by deposing InAs on a GaAs substrate. After a critical InAs coverage value is reached the dots become self-assembled due to strain. The resulting dots typically have a height of 5.7 nm and an emission at about 900 nm occurs until a second critical coverage point is traversed.