Interface width evaluation in thin layered CoFeB/MgO multilayers including Ru or Ta buffer layer by X-ray reflectivity
Articolo
Data di Pubblicazione:
2013
Abstract:
To elucidate in details any possible influence of the adjacent layers on perpendicular magnetic anisotropy in very thin ferromagnetic CoFeB electrodes of CoFeB/MgO based stacks, we grew by sputtering BL/CoFeB (1 nm) and BL/CoFeB (1 nm)/MgO (2 nm), being BL (buffer layer) = Ta (5 nm) or Ru (1 nm) multilayers, consisting of 30 repetitions of the bi- or tri-layers. Specular X-ray reflectivity (XRR) has been performed on both as grown and annealed (300 C in vacuum) multilayers. From XRR results, good reproducibility of each layer thickness is achieved, indicating a well-controlled film growth. Further, CoFeB/MgO interface is found to be quite smooth and stable with annealing, as shown by the limited interface width, while BL/CoFeB interface widens upon annealing, in particular when BL = Ta is used. We discuss the above findings, also considering the role of possible layer crystallinity in affecting the interface width, and tentatively relate them to the magnetic anisotropic behavior of the stacks. © 2012 Elsevier B.V. All rights reserved.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
Anisotropic behaviors; CoFeB/MgO; Interface widths; Perpendicular magnetic anisotropy; Reproducibilities; Specular x-ray reflectivities; Ta buffer layers; X ray reflectivity; Annealing; Buffer layers; Cobalt compounds; Dielectric materials; Film growth; Magnetic anisotropy; Ruthenium; Tantalum; X rays; Multilayers
Elenco autori:
Lamperti, Alessio; Mantovan, Roberto
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