Ultrafast high-temperature sintering and thermoelectric properties of n-doped Mg2Si

Ultrafast high-temperature sintering (UHS) is a recently proposed technique able to synthesize and sinter dense materials within seconds. Although UHS has already proved its effectivity with a large set of materials, spanning from refractory ceramics to complex metal alloys, any application to thermoelectric materials is today still lacking. Mg2Si is a well-established thermoelectric material. It is based on wide available non-critical raw materials, it is non-toxic, lightweight and it expresses its best thermoelectric performances in the intermediate temperature range (up to about 600 ?C). Mg2Si is typically produced with powder processing by Spark Plasma Sintering (SPS), partially limiting its widespread diffusion also due to the costly production technique. Here we present a simple route to sinter Mg2Si pressed powders by UHS. The process allowed to obtain dense samples (with relative densities >95%) with 20 s heating up to about 1080 ?C followed by a rapid free cooling, a total thermal history below 1 min, and with energy demand at the Wh scale. The high process rate proved its efficacy in preventing grain growth and in avoiding any significant Mg evaporation. A full thermoelectric functional characterization is presented for Mg2Si and Bi-doped Mg2Si, together with a comparison with SPS-produced properties.