Data di Pubblicazione:
2002
Abstract:
A scanning electron microscope is used in transmission mode. The image is
formed with secondary electrons, collected by the standard detector,
resulting from the conversion of transmitted electrons on a circular disk,
covered with MgO smoke, located below the thinned specimen, and centered on
the optical axis. Operating in this mode, bright-field images of As dopant
profiles in Si, having a peak concentrations of 5 and 2.5 at. % and a
spatial extension of about 40 nm, have been observed in cross sectioned
specimens. The description of the dopant profiles has a resolution of 6 nm
as defined by the spot size of the microscope, equipped with a LaB6 tip,
and operating at 30 keV.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
Dopant profiling; STEM; Microelettronica
Elenco autori:
Morandi, Vittorio; Merli, PIER GIORGIO; Corticelli, Franco
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