High responsivity GaN-based UV detectors

The high temperature. characterisation of low barrier metal-semiconductor-metal (MSM) GaN-bulk photodetectors is reported. A very high DC responsivity of 6.7 x 10(6) A/W at room temperature and of 1.4 x 10(6) A/W at 450 K was achieved at the wavelength of 325 nm. These values, which are to our knowledge the highest reported in the literature, are in good agreement with our theoretical calculations.