Effect of lateral dimensional scaling on the thermal stability of thin CoSi2 layers reacted on polycrystalline silicon

Self-aligned CoSi layers were grown on polycrystalline silicon wafers (001). The thermal stability, electrical properties and morphology of the thin layers were investigated at temperature range 850-1000 ¬?C. The resistance increased at increased annealing temperature. The activation energy was obtained, which was attributed to the silicon grain growth and on the increased rate of resistance at different temperature.