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Three terminals optoelectronics devices integrated into a silicon waveguide

Academic Article
Publication Date:
2003
abstract:
In this paper we describe two different kind of optoelectronic devices both based on a three terminals active device and exploit the plasma dispersion effect to achieve the desired working. The first device exploits this effect in order to obtain an optical modulation. The second device is an optoelectronic router based on the mode-mixing principle together with the injection-induced optical phase shift. Both devices are integrated into a Silicon on Silicon optical channel waveguide which can be realized using a standard bipolar process. The possibility of using standard, well-known technology presents several advantages with respect to III-V Optoelectronics. The active three terminal device used is a Bipolar Mode Field Effect Transistor (BMFET). Numerical simulation results are presented on both devices.
Iris type:
01.01 Articolo in rivista
List of contributors:
Iodice, Mario; Coppola, Giuseppe
Authors of the University:
COPPOLA GIUSEPPE
IODICE MARIO
Handle:
https://iris.cnr.it/handle/20.500.14243/53239
Published in:
OPTICS AND LASERS IN ENGINEERING
Journal
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