Publication Date:
2002
abstract:
A kinetic 3D lattice Monte-Carlo (MC)model is introduced, which allows to
describe the evolution of boron-rich silicon, especially the formation of
boron-interstitial clusters of various structures and compositions. Using a
refined bcc lattice with lattice constant abcc = aSi/4 a large variety of
defect configurations can be mapped essentially without geometrical
distortions. The energetics of defects can be specified by means of a set
of energy parameters. Boron diffusion is implemented via an
interstitial-assisted mechanism. First results of interstitial-mediated
boron clustering are presented. The future capabilities to study the
kinetics of BnIm cluster formation are outlined.
Iris type:
01.01 Articolo in rivista
List of contributors: