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First-principles optical properties of silicon and germanium nanowires

Academic Article
Publication Date:
2007
abstract:
In this work we study the optical properties of hydrogen-passivated, free-standing silicon and germanium nanowires, oriented along the [I 00] [I I 0] [I I I I directions with diameters up to about 1.5 nm, using ab-initio techniques. In particular, we show how the electronic gap depends on wire's size and orientation; such behaviour has been described in terms of quantum confinement and anisotropy effects, related to the quasi one-dimensionality of nanowires. The optical properties are analyzed taking into account different approximations: in particular, we show how the many-body effects, namely self-energy, local field and excitonic effects, strongly modify the single particle spectra. Further, we describe the differences in the optical spectra of silicon and germanium nanowires along the [100] direction, as due to the different band structures of the corresponding bulk compounds. (C) 2007 Elsevier B.V. All rights reserved.
Iris type:
01.01 Articolo in rivista
Keywords:
FIELD-EFFECT TRANSISTORS; ELECTRONIC-PROPERTIES; BUILDING-BLOCKS; QUANTUM WIRES; SEMICONDUCTORS
List of contributors:
Ossicini, Stefano; DEL SOLE, Rodolfo; Palummo, Maurizia
Handle:
https://iris.cnr.it/handle/20.500.14243/169898
Published in:
SURFACE SCIENCE
Journal
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