Current-induced domain wall depinning and magnetoresistance in La0.7Sr0.3MnO3 planar spin valves

The authors have performed experiments on current-induced domain wall (DW) displacement in La0.7Sr0.3MnO3 nanostructures patterned by gallium (Ga) focused-ion-beam milling. A dc current is found to assist or hinder, according to polarity, an external magnetic field in the depinning of a DW trapped in a nanoconstriction. For large enough currents, the DW depinning occurs in the absence of external magnetic field. The depinning current depends on the transverse anisotropy constant of the region toward which the DW is displaced.