Remote plasma MOCVD growth and processing of GaN: A study by real time ellipsometry

In situ real time spectroscopic ellipsometry, X-ray photoelectron spectroscopy and optical emission spectroscopy are used to study the processes of sapphire substrate cleaning and nitridation upon exposure to rf plasma generated H- and N-atoms, respectively, at temperature as low as 200 degrees C. It is found that I-I-atoms are effective in removal carbon contamination and: that the in-diffusion process of H-atoms can be controlled by ellipsometry. Moreover, it is: found that remote plasma nitridation at 200 degrees C forms an homogeneous surface nitrided layer after: approximate to 30 min of exposure. Finally,, the study of the GaN growth rate for the low temperature N-2 plasma assisted growth is reported.