Low pressure MOVPE growth and structural properties of ZnMgSe epilayers on (100)GaAs
Academic Article
Publication Date:
2000
abstract:
The low-pressure MOVPE growth of ZnMgSe on (1 0 0)GaAs is reported. ZnMgSe alloys were deposited after a thin pseudomorphic ZnSe buffer layer by using dimethylzinc: triethylammine (Me2Zn:Et3N), ditertiarylbutilselenide (Bu-t(2) Se) and bis(methylcyclopentadienyl)magnesium [(MeCp)(2)Mg]. Zn1-xMgxSe (0.10
Iris type:
01.01 Articolo in rivista
Keywords:
VAPOR-PHASE EPITAXY; LASER-DIODE; HETEROSTRUCTURES; ENERGY; LAYERS
List of contributors:
Prete, Paola
Published in: