Publication Date:
2008
abstract:
Silicon oxide nanowires hold great promise for functional nanoscale electronics. Here, we investigate the oxidation of straight, massively
parallel, metallic Si nanowires. We show that the oxidation process starts at the Si NW terminations and develops like a burning match. While
the spectroscopic signatures on the virgin, metallic part, are unaltered we identify four new oxidation states on the oxidized part, which show
a gap opening, thus revealing the formation of a transverse internal nanojunction.
Iris type:
01.01 Articolo in rivista
List of contributors:
Olivieri, Bruno
Published in: