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Hydrogen precipitation in highly oversaturated single-crystalline silicon

Academic Article
Publication Date:
1995
Iris type:
01.01 Articolo in rivista
Keywords:
ION-IMPLANTED SILICON; MOLECULAR-HYDROGEN; SI/SIO2 INTERFACE; DEFECTS; SEMICONDUCTORS
List of contributors:
Balboni, Roberto
Authors of the University:
BALBONI ROBERTO
Handle:
https://iris.cnr.it/handle/20.500.14243/198632
Published in:
PHYSICA STATUS SOLIDI. A, APPLIED RESEARCH
Journal
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