Publication Date:
1997
abstract:
A 1.5 ?m thin SiO2/Si3N4/SiO 2 membrane was manufactured on ?100? Silicon substrate. Also a 10-20 ?m thin GaAs membrane was manufactured using a new etching solution. Both types of membranes are destined to be used as support for microwave circuits; this has as effect a major improvement of circuits' performances
Iris type:
04.01 Contributo in Atti di convegno
Keywords:
Membranes; Microwave Circuits
List of contributors:
Marcelli, Romolo
Book title:
Proceedings of the 20th Edition of the International Semiconductor Conference, IEEE CAS '97