10 um thin GaAs Membrane manufacterd by Nonselective Etching

The aim of this paper is to determine an optimum nonselective etching solution in order to manufacture an as thin as possible, uniform and high quality GaAs membrane. Three different etching systems in various proportions of the components were analyzed. A high quality 10 micrometer thin GaAs membrane was obtained using the [1(H3PO4)]: [1(CH3OH)]: [3(H2O2)] etching solution. The micromachined GaAs membranes are manufactured to be used as support for microwave circuits as well as in high temperature sensor applications.