Novel approaches to plasma deposition of amorphous silicon-based materials

The effect of dopant addition, frequency of the r.f. field, UV-light irradiation, and plasma modulation on the plasma deposition of amorphous silicon based materials (a-Si:H, a- Si:H,F, a-Si,Ge:H,F ) is examined. The discussion of the implications of the experimental results for current mechanistic models of these systems is stressed.