Tunable Band-Stop Resonator on Silicon Micromachined Membrane

Using silicon membranes to support MSW-SERs offers important openings toward the integration of magnetostatic wave devices into micromachined MIC and MMIC structures. In a previous paper a tunable band-pass resonator on silicon membrane was presented. A complementary device, a band-stop resonator on micromachined silicon membrane is presented in this contribution. As a selective frequency component, a frequency YIG film tunable magnetostatic wave (MSW) straight edge resonator (SER) has been used. Measurements for different DC biasing magnetic fields demonstrates a tunability between 3 GHz and 10 GHz. Attenuation is ranged between 20 dB at the limits of the frequency domain (4.70 GHz and 7.5 GHz) and more than 30 dB at central frequencies (5 GHz ... 6.5 GHz). The quality factor was ranged between (approx.) Q = 520 at 5.34 GHz and Q = 480 at 6.00 GHz.