High performance 1300 nm undoped InAs/InGaAs/GaAs quantum dot lasers

In this manuscript we show our results obtained from undoped QD laser devices grown by Molecular Beam Epitaxy in terms of high modal gain, high characteristic temperature and high frequency behaviour under direct modulation in a wide temperature range. These results were obtained by exploiting heterostructures with InAs quantum dots grown without incorporation of p-doping in the active region or tunnelling injection structures. QD lasers exhibited a saturation modal gain as high as 42 cm(-1), in laser heterostructures containing up to 7-stacked QD layers. Additionally we report on experimental results of directly modulated single-transverse mode QD lasers with 6 layers of QDs, at different temperatures. 10 Gb/s eye patterns at 15 degrees C and 50 degrees C and 5 Gb/s direct modulation in the whole explored temperature range (15 degrees C - 85 degrees C) are demonstrated. A characteristic temperature of I 10 K in the full temperature range was also obtained.