Publication Date:
2007
abstract:
Mn0.06Ge0.94 samples have been grown by molecular-beam epitaxy on Ge(001)2 ยท 1. High-resolution transmission electron microscopy
shows the coexistence of an ordered diluted Mn0.06Ge0.94 film and of nanoscopic crystallites, which were identified as Mn5Ge3
by electron diffraction. The magnetic properties of the Mn0.06Ge0.94 samples show a superposition of a paramagnetic behavior, due
to the interaction of Mn atoms diluted in the Ge host, and a ferromagnetic behavior attributed to the Mn5Ge3 crystallites dispersed into
the films. The Mn L2,3 X-ray absorption spectra of the Mn0.06Ge0.94 films exhibit a lineshape typical of metallic Mn, with considerably
reduced multiplet structure.
Iris type:
01.01 Articolo in rivista
Keywords:
Metal-semiconductor interface; Electron microscopy; X-ray absorbtion spectroscopy; magnetic measurements
List of contributors:
Olivieri, Bruno
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