Strontium titanate resistance modulation by ferroelectric field effect

Among perovskite oxides strontium titanate (STO) SrTiO3 undergoes a metal-insulator transition at very low carrier concentration and exhibits high mobility values at low temperature. We exploited such electrical properties and the structural compatibility of perovskite oxide materials in realizing ferroelectric field effect epitaxial heterostructures. By pulsed laser deposition, we grew patterned field effect devices, consisting of lanthanum doped STO and Pb(Zr,Ti)O3. Such devices showed a resistance modulation up to 20%, consistent with geometrical parameters and carrier concentration of the semiconducting channel.