Publication Date:
2001
abstract:
We explored the feasibility of employing strontium titanate SrTiO3 as semiconducting material in field effect and ferroelectric field effect epitaxial devices. Oxygen reduced SrTiO3-? exhibits low temperatures mobility values comparable with those commonly found for silicon. By Pulsed Laser Deposition, we realized patterned field effect devices, showing a resistance modulation up to 90%. These results could open new perspectives for crystalline oxides electronics.
Iris type:
01.01 Articolo in rivista
List of contributors:
Marre', Daniele; Siri, Antonio; Pellegrino, Luca; Pallecchi, Ilaria; Bellingeri, Emilio
Published in: