Organometallic compounds as precursors for chemical vapor deposition of thin films of inorganic materials

Several studies concerning the MOCVD of In-based epitaxial materials, oxides of Ti, Zr, Hf. Tl and Pt metal have been carried out also by using new precursors. It has been found that In(CH3)2C2H, suffers disproportionation reactions, while epitaxial InP thin films of promising quality have been obtained by reaction of the new precursors [In(CH3)2Pz]2 (pz = pyrazole) and [(CH3CH2)2InN(CH3)2] 2 with PH3. The oxide thin films have been deposited both using oxygenated precursors (TiO2 and HfO2) and oxygen free precursors (ZrO2 from Zr[N(C2H5)2]4 and Tl2O3 from TlC5H5 and TlC5H4CH3). In some cases the effect of the oxygen and the thermal behaviour of the precursors have been studied. Very pure Pt films exempt from C have been obtained with the new precursor Pt[C5H4CH3][CH2CHCH2] in N2 atmosphere free of H2. -------------------------------------------------------------------------------- Reaxys Database Information |