High quality a-SiC:H films and their application in p-i-n structures for optoelectronic devices

Aim of the present work is the deposition of high quality a-SiC:H films by a new designed Ultra High Vacum PECVD System, with and without hydrogen dilution, the study of their optoelectronic properties and their inclusion in p-i-n structures such as photovoltaic solar cells and light emitting devices.