Bulk micro defects behaviour in not-intentionally contaminated epi Si submitted to relaxation and segregation gettering
Academic Article
Publication Date:
2007
abstract:
An EBIC study of bulk micro defects (BMDs) in not-intentionally contaminated epi Si submitted to both relaxation and segregation gettering and with an unknown initial contaminant concentration below the sensitivity of DLTS has been carried out. It allowed to establish which was the contaminant (Fe) and the possible range of its initial concentration. An evaluation of the behaviour of the BMDs during relaxation gettering and of the contribution of relaxation gettering to the overall gettering process was performed.
Iris type:
01.01 Articolo in rivista
Keywords:
CZOCHRALSKI-GROWN SILICON; IRON; TECHNOLOGY; IMPURITIES; MECHANISMS
List of contributors:
Frigeri, Cesare; Gombia, Enos; Motta, Alberto
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