Reflected electron energy-loss microscopy and scanning auger microscopy study of semiconductor surfaces

The diagnostic potential of reflected electron energy-loss microscopy (REELM) and scanning Anger microscopy (SAM) are explored with respect to two particular aspects encountered in the surface microchemical analysis of semiconductor materials: determining the kind of coverage, i.e. whether continuous or otherwise, of the foreign film present at the surface of the single semiconductors; highlighting the spatial distributions of chemical species present at the surface of complex systems composed of different semiconductors.