Studies on nitridation of laser evaporated III-IV group elements with gaseous ammonia and thin film deposition

Groups III and IV nitrides have been viewed as promising materials in many technological applications, mostly in electronic devices and in ceramic materials. Many techniques such as CVD and MBE have been used to grow nitride thin films. A method to prepare nitrides by adding gaseous ammonia to laser evaporated elements has been developed in our laboratory. B, In, Si and Ge nitrides have been prepared by this method. The intermediate steps in nitride production have been examined by optical emission measurements and by mass spectrometry of the gas phase. The final products of the reaction have been characterized on various substrate surfaces by conventional techniques such as SEM, XRD and IR.