Simulation and experimental results on the forward J-V characteristic of Al implanted 4H-SiC p-i-n diodes

In this work the forward J-V characteristics of 4H-SiC p-i-n diodes are analysed by means of a physics based device simulator tuned by comparison to experimental results. The circular devices have a diameter of 350 pm. The implanted anode region showed a plateau aluminium concentration of 6 x 10(19)cm(-3) located at the surface with a profile edge located at 0.2 mu m and a profile tail crossing the n-type epilayer doping at 1.35 mu m. Al atom ionization efficiency was carefully taken into account during the simulations. The final devices showed good rectifying properties and at room temperature a diode current density close to 370 A/cm(2) could be measured at 5V. The simulation results were in good agreement with the experimental data taken at temperatures up to about 523 K in the whole explored current range extending over nine orders of magnitude. Simulations also allowed to estimate the effect of a different p(+) doping electrically effective profile on the device current handling capabilities.