Voids-free 3C-SiC/Si interface for high quality epitaxial layer

Academic Article
Publication Date:
2016
Iris type:
01.01 Articolo in rivista
Keywords:
3C-SiC; Heteroepitaxy; High quality 3C-SiC/Si interface; Voids reduction
List of contributors:
Authors of the University:
Handle:
https://iris.cnr.it/handle/20.500.14243/329030
Published in:
MATERIALS SCIENCE FORUM
Series