Tunable Short-Term Plasticity Response in Three-Terminal Organic Neuromorphic Devices

Reversibly tunable short-term plasticity (STP) of the channel current in organic neuromorphic devices is demonstrated with a three-terminal architecture. Electrolyte-gated organic transistors--EGOTs--are driven with square voltage pulses at the drain electrodes, while the gate bias enables the modulation of the amplitude and characteristic time scale of the depressive STP spiking response up to 1 order of magnitude. The gate potential sets the baseline and the steady-state current, preluding multilevel memory writing. The fine-tuning of the STP response, which is not possible with two-electrode organic neuromorphic devices, is reversible and does not imply chemical modifications of the active layer.