Single-crystal CuIn1 -xGaxSe2 films grown on lattice-matched Ge by low-temperature Pulsed Electron Deposition technique
Conference Paper
Publication Date:
2014
abstract:
We report on the epitaxial growth of Cu(In,Ga)Se2 (CIGS) thin films on n-type Ge substrates using the Pulsed Electron Deposition (PED) technique. Single-crystal films with smooth interface and no dislocations were obtained at a substrate temperature of 300°C with thickness above 1.5?m. CIGS/Ge epilayers were characterized in terms of Transmission Electron Microscopy, X-Ray Diffraction and Photoluminescence. Preliminary results are very promising for a variety of potential applications as absorber layer in single and multi-junction thin-film solar cells.
Iris type:
04.01 Contributo in Atti di convegno
Keywords:
X-ray diffraction; copper compounds; electron beam deposition; gallium compounds; indium compounds; photoluminescence; semiconductor epitaxial layers; semiconductor growth; ternary semiconductors; transmission electron microscopy; vapour phase epitaxial growth; CuIn1-xGaxSe2; Ge; X-ray diffraction; absorber layer; epilayers; epitaxial growth; lattice-matched Ge; low-temperature pulsed electron deposition; multijunction thin film solar cells; n-type Ge substrates; photoluminescence; single junction thin film solar cells; single-crystal thin films; smooth interface; temperature 300 degC; transmission electron microscopy; Coils; Electric potential; Epitaxial growth; Microscopy; Photovoltaic cells; Radio frequency; CIGS; epitaxial CIGS; low-temperature epitaxy; thin film solar cells
List of contributors:
Mezzadri, Francesco; Bronzoni, Matteo; Gombia, Enos; Frigeri, Paola; Nasi, Lucia; Seravalli, Luca; Rampino, Stefano; Trevisi, Giovanna; Pattini, Francesco
Book title:
Photonics Technologies, 2014 Fotonica AEIT Italian Conference on