Mechanism of Ohmic contact formation in Ti/Al bilayers on AlGaN/GaN heterostructures with a different crystalline quality
Conference Paper
Publication Date:
2014
abstract:
In this paper, the electrical and structural properties of Ti/Al Ohmic contacts have been investigated comparing AlGaN/GaN heterostructures with different dislocation density. The annealing temperature leading to Ohmic be-haviour is related to the material quality of the substrate. Moreover a different temperature dependence of the spe-cific contact resistance RC has been observed.
Iris type:
04.01 Contributo in Atti di convegno
List of contributors:
Greco, Giuseppe; Bongiorno, Corrado; Roccaforte, Fabrizio; Giannazzo, Filippo; DI FRANCO, Salvatore
Book title:
Proceedings of the 38th Workshop on Compound Semiconductors Devices and Integrated Circuits (WOCSDICE2014) and 12th Expert Evaluation and Control of Compound Semiconductor Materials and Technology (EXMATEC2014)