Optical and electrical properties of ion implanted Titanium Nitride thin films

Optical and electrical characteristics of titanium nitride films obtained by N//2** plus -implantation on Ti-coated silicon wafers were studied in order to check the possibility of producing films with good transparency and conductivity properties, to be utilized as conductive and antireflective coatings in solar cell fabrication. Unusual properties were found even in the as-implanted samples; effects of annealing treatments in vacuum and H//2 ambients were investigated, as well as those of different transient annealing procedures (incoherent light and electrons), all resulting in a further improvement of the overall films characteristics.