Random Telegraph Signal Investigation in Different CMOS SPAD Layouts

This paper investigates the Random Telegraph Signal (RTS) in Single Photon Avalanche Diodes (SPADs). The test-chip features SPADs with different architectures implemented in 150 nm CMOS technology. The test-chip has been irradiated with 21 MeV proton beam. RTS occurrence probability has been investigated in two different architectures. RTS measurements allowed to investigate the defect responsible for RTS phenomenon.