Wide wavelength tuning of GaAs/AlxGa1-xAs bound-to-continuum quantum cascade lasers by aluminum content control
Articolo
Data di Pubblicazione:
2008
Abstract:
Tuning of the emission wavelength in GaAs/AlxGa1-xAs bound-to-continuum quantum cascade lasers with different Al mole fractions (x) is reported. By varying x in the range of 0.37-0.52, a shift of the emission wavelengths of over 4 mu m has been observed. Using this method, laser action in the range of 11.2-15.3 mu m at temperatures T >= 260 K has been demonstrated with a record value of similar to 340 K for GaAs based QCLs operating at 13.5 mu m. (C) 2008 American Institute of Physics.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
MU-M; TEMPERATURE PERFORMANCE; SEMICONDUCTOR
Elenco autori:
Scamarcio, Gaetano; Vitiello, MIRIAM SERENA
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