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Soliton dynamics in a semicondutor cavity soliton laser with broken translational symmetry

Conference Paper
Publication Date:
2011
abstract:
In a vertical cavity semiconductor laser with an intracavity saturable absorber, cavity solitons (CS) behave as localized micro-lasers freely placed in the transverse plane, sitting over a zero-intensity, non-lasing background, thus realizing a cavity soliton laser (CSL) [1]. We show that in this system there are parametric conditions for which the CS moves spontaneously in the transverse plane, with a velocity of the order of some m/ns, depending on the parameters of the system. Key parameters ruling the dynamical instability causing CS motion are the pump and the ratio between the non-radiative decay rates of carriers belonging to the active and passive media [2]. © 2011 IEEE.
Iris type:
04.01 Contributo in Atti di convegno
List of contributors:
Brambilla, Massimo
Handle:
https://iris.cnr.it/handle/20.500.14243/287909
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http://www.scopus.com/record/display.url?eid=2-s2.0-80052283931&origin=inward
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