Characterization of Nanocrystalline Silicon Film grown by LEPECVD for Photovoltaic Applications

This work deals with the structural properties of nanocrystalline (nc) silicon films for solar cell applications, grown using a new PECVD process based on an arc discharge plasma characterized by low ion energies, called LEPECVD (Low energy PECVD). This process permits to increase the intensity of the plasma discharge in the growth region and thus to achieve higher growth rates while avoiding ion-induced surface damage of films. The structural properties of the LEPECVD grown films were studied as a function of the deposition parameters (substrate temperature, growth rate, hydrogen dilution) by Raman Spectroscopy, SEM, and HRTEM analysis. The results of this work allowed us to identify the process requirements suitable for the growth of nc-grains in an amorphous matrix.