EPR AND X-RAY-DIFFRACTION STUDY OF DAMAGE PRODUCED BY IMPLANTATION OF B IONS (50 KEV, 1 MEV) OR SI IONS (50 KEV, 700 KEV, 1.5 MEV) INTO SILICON

Electron paramagnetic resonance and double crystal X-ray diffraction were used to analyse damage accumulation with dose in silicon implanted at room temperature with B and Si ions at 50 keV and MeV energies. Electron paramagnetic resonance reveals the presence of Si-P3 (neutral tetravacancy), D centers (indicative of amorphous Si), and ? centers, which are probably vacancy complexes. The total number of (? + D) centers and the depth integral of the lattice strain determined by X-rays increase sublinearly with increasing dose. The sublinearity is interpreted in terms of dynamic annealing of the defects during implantation. Suggestions are made to explain the differences observed in the results of Si and B implants.