Publication Date:
2019
abstract:
In this paper, we present the extensive characterization of large-area silicon carbide-based UV sensors candidate for outdoors spectroscopic applications of gas or liquid. The proposed SiC Schottky devices exhibit a dark current density of 0.12 nA/cm(2) at 15 V, a 0.12-A/W responsivity at 300 nm, optimal visible blindness, and a switching time of similar to 190 ns. Effects of temperature on the sensor performance, of crucial interest for outdoors applications, are also examined in the range from -20 degrees C to 90 degrees C.
Iris type:
01.01 Articolo in rivista
Keywords:
Large area UV photodetector; optical sensor; SiC detector; Schottky diode
List of contributors:
D'Arrigo, GIUSEPPE ALESSIO MARIA; Sciuto, Antonella; DI FRANCO, Salvatore; Franzo', Giorgia
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