Pseudomorphic growth of ?-Sn on InSb(100): Electronic structure and morphological properties

We present a high energy-resolution photoemission study of the growth morphology and electronic properties of ?-Sn prepared on InSb(100). ?-Sn(100) pseudomorphic growth proceeds in a layer-by-layer mode on the InSb(100)-c(8×2) reconstructed substrate. From 4 monolayer coverage up to about 200 monolayers, a well-ordered two-domain (2×1) reconstruction of the ?-Sn surface has been observed. The corresponding valence band shows a non-metallic character. Valence band photoemission results also are discussed in comparison with calculated surface density of states. The surface-induced states at the ?-Sn(100)-(2×1) surface are tentatively attributed to the theoretically predicted formation of asymmetric Sn-Sn dimers on the surface.