ATOMIC SCALE CHARACTERIZATION OF ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH USING INSITU GRAZING-INCIDENCE X-RAY-SCATTERING

In this work, we present the results of the application of grazing incidence X-ray scattering to the study of organometallic vapor phase epitaxial (OMVPE) growth of GaAs. We determined that, although several types of reconstructions may be present under steady-state conditions both prior to and after growth, these reconstructions disappear during growth. In addition, by monitoring the intensity of the surface-sensitive crystal truncation rod, we have been able to establish that layer-by-layer growth occurs under typical OMVPE growth conditions, while the growth mode changes to step-flow at high temperatures. Finally, by observing diffuse scattering near the truncation rods, we have been able to estimate the average island spacing, its temperature dependence, and the anisotropic nature of the nucleation and growth of GaAs.