Comparative Analysis of Noise in Current Mirror Circuits based on CNTFET and MOS Devices

In this paper we study an application of CNTFET in the design of current mirrors, key components of analogue circuits, in order to examine the noise behavior of CNTFETs. We compare the CNTFET with a MOSFET of comparable scale and we present the results obtained using simulation for two different current mirror circuits, each time with different current values. To achieve this goal we use a semi-empirical compact CNTFET model, already proposed by us, including noise source contributions, and the BSIM4 model for MOS device. After the simulation of the I-V curves, the differential output resistance and the output impedance at various frequencies, we present the spectral density of output noise current, obtaining for all proposed cases that the output noise current is always higher for the CNTFET than for the MOS device.