Nanostructured In2O3-SnO2 sol-gel thin film as material for NO2 detection

Nanocrystalline SnO2, In2O3 and In2O3-SnO2 thin films have been prepared by modified sol-gel methods making use of no-standard precursors and a suitable surfactant. The oxide thin films have been used as gas-sensing layers in chemoresistive gas sensors and their performances in the detection of nitrogen dioxide (2-20 ppm in dry air) have been analysed by electrical characterization in controlled atmosphere. The samples have been structurally and morphologically characterized by X-ray diffraction and SEM, respectively. Good gas-sensing responses towards NO, have been found for all the prepared samples with improved performances for the In2O3-SnO2 based sensor. The performances of the sensors have been discussed according to the surface chemical reactions between the gas phase and the semiconductor.